Study of MOS capacitor with TiO2 and SiO2 and SiO2/TiO2 gate dielectric (2007)
Source: Journal of Integrated Circuits and Systems. Unidade: EP
Subjects: MICROELETRÔNICA, CIÊNCIA DA COMPUTAÇÃO
ABNT
ALBERTIN, Katia Franklin e VALLE, M A e PEREYRA, Inés. Study of MOS capacitor with TiO2 and SiO2 and SiO2/TiO2 gate dielectric. Journal of Integrated Circuits and Systems, v. 2, n. 2, 2007Tradução . . Acesso em: 21 maio 2024.APA
Albertin, K. F., Valle, M. A., & Pereyra, I. (2007). Study of MOS capacitor with TiO2 and SiO2 and SiO2/TiO2 gate dielectric. Journal of Integrated Circuits and Systems, 2( 2).NLM
Albertin KF, Valle MA, Pereyra I. Study of MOS capacitor with TiO2 and SiO2 and SiO2/TiO2 gate dielectric. Journal of Integrated Circuits and Systems. 2007 ;2( 2):[citado 2024 maio 21 ]Vancouver
Albertin KF, Valle MA, Pereyra I. Study of MOS capacitor with TiO2 and SiO2 and SiO2/TiO2 gate dielectric. Journal of Integrated Circuits and Systems. 2007 ;2( 2):[citado 2024 maio 21 ]